cystech electronics corp. spec. no. : c857n3 issued date : 2011.03.31 revised date : 2011.04.01 page no. : 1/8 BTD1304N3 cystek product specification npn epitaxial planar transistor bv ceo 20v audio muting application BTD1304N3 i c 500ma r ce(sat) 0.3 (typ) features ? high emitter-base voltage, v ebo =12v(min). ? high reverse h fe , reverse h fe =20(min.) @v ce =2v, i c =4ma. ? low on-resistance, ron=0.6 (max)@i b =1ma. ? pb-free and halogen-free package. symbol outline BTD1304N3 sot-23 b base c collector e emitter absolute maximum ratings (ta=25 c) parameter symbol limit unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 12 v collector current i c 500 ma base current i b 50 ma power dissipation p d 225 mw thermal resistance, junction to ambient r ja 556 c/w junction temperature tj 150 c storage temperature tstg -55~+150 c
cystech electronics corp. spec. no. : c857n3 issued date : 2011.03.31 revised date : 2011.04.01 page no. : 2/8 BTD1304N3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 50 - - v i c =100 a, i e =0 bv ceo 20 - - v i c =1ma, i b =0 bv ebo 12 - - v i e =10 a, i c =0 i cbo - - 100 na v cb =40v, i e =0 i ebo - - 100 na v eb =12v, i c =0 *v ce(sat) - 34 100 mv i c =100ma, i b =10ma *v ce(sat) - 0.15 0.3 v i c =500ma, i b =20ma *r ce(sat) - 0.3 0.6 i c =500ma, i b =20ma *v be(sat) - 0.67 1 v i c =100ma, i b =10ma *h fe 1(for) 200 - 800 - v ce =2v, i c =4ma *h fe 2(for) 400 - - - v ce =3v, i c =100ma *h fe 3(rev) 20 - - - v ce =2v, i c =4ma f t - 250 - mhz v ce =10v, i c =50ma, f=100mhz cob - 10 - pf v cb =10v, f=1mhz ron - - 0.6 vin=0.3v, i b =1ma, f=1khz *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking BTD1304N3 sot-23 (pb-free and halogen-free package) 3000 pcs / tape & reel max
cystech electronics corp. spec. no. : c857n3 issued date : 2011.03.31 revised date : 2011.04.01 page no. : 3/8 BTD1304N3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200ua 300ua 400ua 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib= 500ua 1ma 1.5ma 2ma 5ma emitter grounded output characteristics 0 0.5 1 1.5 2 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=2ma 20ma 4ma 6ma emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=5ma 10ma 20ma 50ma current gain vs collector current 100 1000 10 100 1000 collector current---ic(ma) current gain---hfe 75 25 125 vce=1v -25 current gain vs collector current 100 1000 10 100 1000 collector current---ic(ma) current gain---hfe 75 25 125 vce=2v -25
cystech electronics corp. spec. no. : c857n3 issued date : 2011.03.31 revised date : 2011.04.01 page no. : 4/8 BTD1304N3 cystek product specification typical characteristics(cont.) current gain vs collector current 100 1000 10 100 1000 collector current---ic(ma) current gain---hfe 75 25 125 vce=3v -25 current gain vs collector current 100 1000 10 100 1000 collector current---ic(ma) current gain---hfe 75 -25 125 vce=10v 25 saturation voltage vs collector current 1 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vcesat=10ib 125c 75c 25c -25 saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vcesat=20ib 125c 75c 25c -25 saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vcesat=25ib 125c 75c 25c -25 saturation voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) 125 vbesat=10ib 75 25 -25
cystech electronics corp. spec. no. : c857n3 issued date : 2011.03.31 revised date : 2011.04.01 page no. : 5/8 BTD1304N3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) 125 vbesat=20ib 75 -25 25 on voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) 125 vce=2v 75 25 -25 capacitance vs reverse-biased voltage 1 10 100 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob
cystech electronics corp. spec. no. : c857n3 issued date : 2011.03.31 revised date : 2011.04.01 page no. : 6/8 BTD1304N3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c857n3 issued date : 2011.03.31 revised date : 2011.04.01 page no. : 7/8 BTD1304N3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c857n3 issued date : 2011.03.31 revised date : 2011.04.01 page no. : 8/8 BTD1304N3 cystek product specification sot-23 dimension *:typical inches h j k d a l g v c b 3 2 1 s style : pin 1.base 2.emitter 3.collector 3-lead sot-23 plastic surface mounted package cystek package code: n3 marking: product code date code: year+month year: 3 2003, 4 2004 month: 1 1, 2 2, ??? 9 9, a 10, b 11, c 12 millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0034 0.0070 0.085 0.177 b 0.0472 0.0630 1.20 1.60 k 0.0128 0.0266 0.32 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1083 2.10 2.75 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0005 0.0040 0.013 0.10 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cysrek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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